Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-05-30
1999-08-10
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438585, 438666, H01L 2144
Patent
active
059373261
ABSTRACT:
A method for making a semiconductor device having a via hole, includes the steps of depositing a second metal layer onto a first insulating layer formed on a semiconductor substrate where a first metal layer is formed on its lower surface, and forming a first photoresist layer. The second metal layer is then etched, using the first photoresist layer as a first etching mask, to form a metal line. Thereafter, the first photoresist layer is removed and a second photoresist layer is formed over the metal line. The metal line is etched, using the second photoresist layer as a second etching mask, to make the metal line protrude. The inventive method further includes a step for depositing a second insulating layer onto the metal line, forming a third photoresist layer on the second insulating layer, and etching the second insulating layer, using the third photoresist layer as a third etching mask, for the formation of a via hole on the metal line.
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Gurley Lynne A.
Hyundai Electronics Industries Co,. Ltd.
Niebling John F.
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