Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-04-08
2008-04-08
Smith, Bradley K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000
Reexamination Certificate
active
11393151
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.
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Barns Chris E.
Brask Justin K.
Cappellani Annalisa
Chau Robert S.
Datta Suman
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Smith Bradley K
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