Method for making semiconductor device by coating an SOG film in

Details Method for making semiconductor device by coating an SOG film in Method for making semiconductor device by coating an SOG film in

1997-02-26

1998-06-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438781, 438782, 427240, H01L 21316

Patent

active

057633290

ABSTRACT:
A method for making a semiconductor device, includes steps of: forming a lower wiring on a semiconductor substrate; forming layer insulation film to cover the lower wiring; coating a surface of the layer insulation film with organic or inorganic SOG to form SOG film; heat-treating the SOG film; etching the SOG film to even a surface of the SOG film; forming an aperture reaching through the SOG film and the layer insulation film to the lower wiring; and filling the aperture with a conductive material to form a through-hole, wherein the coating step with the organic or inorganic SOG is conducted in amine system gas atmosphere.

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patent: 5094884 (1992-03-01), Hillman et al.
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patent: 5506177 (1996-04-01), Kishimoto et al.
European Search Report, Sep. 24, 1997.
Wolf, Stanley Silicon Processing for the VLSI ERA, vol. 2, pp. 229-235, 1990.

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