Method for making semiconductor device

Details Method for making semiconductor device Method for making semiconductor device

1995-12-11

1997-12-23

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438789, 438783, H01L 21471

Patent

active

057007365

ABSTRACT:
An SiOF layer is formed by using as raw material an organic Si compound having Si-F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organic Si compound has Si-F bonds, low in bond energy, and is thus capable of easily getting only Si-F bonds separated, the SiOF layer is prevented from getting contaminated by reaction by-products and fluorine can be introduced into the SiOF layer in stable fashion. Therefore, an insulator layer, low in dielectric constant, low in hygroscopicity and excellent in step coverage, can be formed by using a low powered apparatus.

REFERENCES:
patent: 5215787 (1993-06-01), Homma
patent: 5288518 (1994-02-01), Homma
patent: 5334552 (1994-08-01), Homma
patent: 5420075 (1995-05-01), Homma et al.

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