Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1986-09-02
1988-04-12
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG73, 156DIG80, 156DIG88, 156DIG102, 427 531, C30B 1322
Patent
active
047372338
ABSTRACT:
Semiconductor crystal films on a dielectric substrate are advantageously made by a zone melting method. Single-crystal structure is initiated at a seed surface, and made to extend across a dielectric surface by melting and resolidifying.
Melting is effected upon irradiation with optical radiation which is focused onto an elongated zone; the zone is moved so as to locally melt successive portions of a layer of precursor material which may be amorphous or polycrystalline. The use of incoherent radiation is convenient, and focusing is typically by using a reflector.
The process is conveniently effected under a controlled atmosphere and the layer being crystallized may be encapsulated so that no free semiconductor surface is exposed to an atmosphere.
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Kamgar Avid
Labate Ernest
Ligenza Joseph R.
Sze Simon M.
American Telephone and Telegraph Company AT&T Bell Laboratories
Businger Peter A.
Lacey David L.
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