Method for making red-light emitting diode having silicon...

Details Method for making red-light emitting diode having silicon... Method for making red-light emitting diode having silicon...

2005-12-30

2009-12-22

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S079000, C257SE33001, C977S950000

Reexamination Certificate

active

07635603

ABSTRACT:
The present invention provides a method for making a light emitting diode (LED) through a silica film growth, an annealing treatment and a surface treatment so that the LED whose spectrum covers the whole red-light zone of a white-light spectrum is obtained with stability, economy, environmental protection and high efficiency.

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Biteen et al. “Controlled passivation of luminescence Blue Shifts of isolated silicon nanocrystals,” Mat. Res. Soc. Symp. Proc vol. 770 16.2.1, 2003.
Boukherroub et al. “Ideal passivation of Luminescent Porous Silicon by thermal, Noncatalytic Reaction with alkenes and Aldehydes,” Chem. Mater 13, 2002-2011, 2001.
Rassel et al. “Electrical properties of SiO2 films with embedded nanoparticles formed by SiH4/O2 chemical vapor deposition,” J. Vac. Sci. Tech. B. 21(6) Dec. 2003.
DiMaria et al. “High current imjection into SiO2 from Si rich SiO2 films and experimental applications,” J. Appl. Phys. 51(5) May 1980.
Hartstein et al. “Identification of electron traps in thermal silicon dioxide films,” Appl. Phys. Lett. 38(8), Apr. 1981.

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