Method for making quantum dots

Details Method for making quantum dots Method for making quantum dots

2008-10-30

2010-06-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S962000

Reexamination Certificate

active

07737008

ABSTRACT:
A method for forming at least one quantum dot at at least one predetermined location on a substrate is disclosed. In one aspect, the method comprises providing a layer of semiconductor material on an insulating layer on the substrate. The layer of semiconductor material is patterned so as to provide at least one line of semiconductor material having a width (wL) and having a local width variation at at least one predetermined location where the at least one quantum dot has to be formed. The local width variation has an amplitude (A) of between about 20 nm and 35 nm higher than the width wLof the at least one line. The at least one line is patterned to form at least one quantum dot. A design for a lithographic mask for use with the method and a method for making such a design are also disclosed.

REFERENCES:
patent: 6194237 (2001-02-01), Kim et al.
patent: 6375737 (2002-04-01), Shih et al.
patent: 7307030 (2007-12-01), Song et al.
patent: 2005/0136655 (2005-06-01), Wasshuber et al.
patent: 2006/0145136 (2006-07-01), Verhoeven
patent: WO 03 083949 (2003-09-01), None
Partial European Search Report dated Jul. 2, 2008 for Application No. EP 07075948.5.

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