Method for making programmable resistance memory element

Details Method for making programmable resistance memory element Method for making programmable resistance memory element

2005-08-09

2005-08-09

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S128000, C438S467000

Reexamination Certificate

active

06927093

ABSTRACT:
A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.

REFERENCES:
patent: 5651857 (1997-07-01), Cronin et al.
patent: 6150253 (2000-11-01), Doan et al.

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