Method for making polystalline silicon thin film

Fishing – trapping – and vermin destroying

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437109, 437174, 148DIG90, H01L 2160

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active

053825489

ABSTRACT:
A method for making a polycrystalline silicon (p-Si) thin film by heat treating an amorphous silicon (a-Si) thin film using a laser beam, including the steps of forming an a-Si thin film over a substrate, forming a metal reflection film over the a-Si thin film, forming, in the metal reflection film, windows each having a width smaller than the width of the regular strong energy portion of laser beam, annealing the portions of a-Si thin film disposed beneath the windows using a laser beam, removing the remaining portions of metal reflection film, each having a width smaller than the width of the regular strong energy portion of laser beam, to expose the portions of a-Si thin film disposed beneath the remaining portions of metal reflection film, and annealing the thus exposed portions of a-Si thin film disposed beneath the remaining portions of metal reflection film. A plurality of microlenses are formed disposed above edges of the portions of the metal reflection film remaining after the formation of the windows. Each microlens serves to refract the energy strength of the peripheral portion of laser beam toward the regular strong energy strength portion of laser beam and thus scatter the energy strength of the peripheral portion of laser beam.

REFERENCES:
patent: 4897150 (1990-06-01), Dooley et al.
patent: 5126863 (1992-06-01), Akira

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