Metal treatment – Compositions – Heat treating
Patent
1980-11-19
1983-08-16
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29590, 148175, 148187, 357 65, 357 91, H01L 21265, H01L 29261, H01L 2348, H01L 754
Patent
active
043989632
ABSTRACT:
Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.
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Jaros et al., Solid St. Electronics, 18, (1975), 1029.
Barnes et al., Appl. Phys. Letts., 33, (1978), 965.
Eastman Lester F.
Stall Richard A.
Wood Colin E. C.
Beers Robert F.
Lall Prithvi C.
McGill Arthur A.
Roy Upendra
The United States of America as represented by the Secretary of
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