Method for making MIS transistor

Details Method for making MIS transistor Method for making MIS transistor

1998-06-09

2000-12-19

Fourson, George

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438291, 438305, 438528, H01L 21336

Patent

active

061627100

ABSTRACT:
Disclosed is a method for making a MIS transistor that a gate electrode and gate insulating film are formed on a semiconductor substrate with a channel region formed implanting an impurity of one conductivity type thereinto, which has the steps of: implanting hydrogen ions through said gate electrode and gate insulating film into said channel region under said gate electrode; ion-implanting an impurity of a conductivity type reverse to said one conductivity type self-aligned to said gate electrode to form a source/drain region; and conducting thermal treatment in an inert atmosphere or nitrogen atmosphere.

REFERENCES:
patent: 4522657 (1985-06-01), Rohatgi et al.
patent: 4584026 (1986-04-01), Wu et al.
Wolf, "Silicon Processing for the VLSI, vol. 2: Process Integration", Lattice Press, Sunset Beach, CA 1990, pp. 333-334 and 354-359.

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