Method for making low defect density semiconductor heterostructu

Details Method for making low defect density semiconductor heterostructu Method for making low defect density semiconductor heterostructu

1991-04-24

1993-06-22

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156614, 156DIG67, 437128, 437969, 437976, C30B 2502

Patent

active

052214133

ABSTRACT:
The present invention is predicated upon the discovery by applicants that by growing germanium-silicon alloy at high temperatures in excess of about 850.degree. C. and increasing the germanium content at a gradient of less than about 25% per micrometer, one can grow on silicon large area heterostructures of graded Ge.sub.x Si.sub.1-x alloy having a low level of threading dislocation defects. With low concentrations of germanium 0.10.ltoreq..times..ltoreq.0.50), the heterolayer can be used as a substrate for growing strained layer silicon devices such as MODFETS. With high concentrations of Ge (0.65.ltoreq..times..ltoreq.1.00) the heterolayer can be used on silicon substrates as a buffer layer for indium gallium phosphide devices such as light emitting diodes and lasers. At concentrations of pure germanium (X=1.00), the heterolayer can be used for GaAs or GaAs/AlGaAs devices.

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J. M. Baribeau, et al "Growth and characterization of Si.sub.1-x Ge.sub.x and Ge epilayers on (100) Si", Journal of Applied Physics, vol. 63, pp. 5738-5746, (1988).

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