Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-23
2005-08-23
Brock, II, Paul E. (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S663000, C438S668000, C438S674000, C438S675000
Reexamination Certificate
active
06933230
ABSTRACT:
The inventor devised methods of forming interconnects that result in conductive structures with fewer voids and thus reduced electrical resistance. One embodiment of the method starts with an insulative layer having holes and trenches, fills the holes using a selective electroless deposition, and fills the trenches using a blanket deposition. Another embodiment of this method adds an anti-bonding material, such as a surfactant, to the metal before the electroless deposition, and removes at least some the surfactant after the deposition to form a gap between the deposited metal and interior sidewalls of the holes and trenches. The gap serves as a diffusion barrier. Another embodiments leaves the surfactant in place to serve as a diffusion barrier. These and other embodiments ultimately facilitate the speed, efficiency, or fabrication of integrated circuits.
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Brock, II Paul E.
Intel Corporation
Schwegman Lundberg Woessner & Kluth P.A.
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