Method for making integrated heterojunction bipolar/high electro

Details Method for making integrated heterojunction bipolar/high electro Method for making integrated heterojunction bipolar/high electro

1997-06-16

1999-07-06

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438172, 438314, 148DIG72, 257195, 257622, 257623, H01L 21338

Patent

active

059207736

ABSTRACT:
An integrated circuit technology combines heterojunction bipolar transistors (HBTs), high electron mobility transistors (HEMTs) and other components along with interconnect metallization on a single substrate. In a preferred embodiment a flat substrate is patterned, using dry etching, to provide one or more mesas in locations which will eventually support HEMTs. A device stack including HEMT and HBT layers is built up over the substrate by molecular beam epitaxy, with the active HEMT devices located on the mesas within openings in the HBT layer. In this way the active HEMT is aligned with the HBT layer to planarize the finished integrated circuit.

REFERENCES:
patent: 5049522 (1991-09-01), Stanchina et al.
patent: 5051372 (1991-09-01), Sasaki
patent: 5166083 (1992-11-01), Bayraktaroglu
patent: 5213987 (1993-05-01), Bayraktaroglu
Kiziloglu, K., et al., "InP-based Mixed . . . Optoelectronic Circuits", Electronics Letters, Nov. 1997, vol. 33, Issue 24.
Streit et al., "Monolithic HEMT-HBT Integration by Selective MBE," IEEE Transactions on Electron Devices, vol. 42, No. 4, pp. 618-623, 1995.

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