Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-05-12
2000-03-14
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438647, 438725, 438780, H01L 21283
Patent
active
060372559
ABSTRACT:
An improved method for making an integrated circuit that includes forming a conductive layer on a substrate, then forming a dielectric layer comprising a polymer on the conductive layer. After forming the dielectric layer, a layer of photoresist is patterned to define a region to be etched. An etched region is then formed through the dielectric layer while simultaneously removing the layer of photoresist.
REFERENCES:
patent: 5354712 (1994-10-01), Ho et al.
patent: 5889141 (1999-03-01), Marrocco, III et al.
Davis Rick
Hussein Makarem A.
Sivakumar Sam
Chaudhari Chandra
Intel Corporation
Kilday L. A.
Seeley Mark V.
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