Method for making integrated circuit devices using a layer of in

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430313, 430319, 430327, 430329, G03C 500

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045296855

ABSTRACT:
An improved method for making an integrated circuit device is disclosed which comprises coating a reflective layer with an antireflective coating comprising a layer of indium arsenide before applying a layer of photosensitive material or photoresist during production of the device. Light passing through the photosensitive material is absorbed by the antireflective coating so that only the minor amount of light required for alignment is reflected back through the photosensitive material resulting in sharper pattern definition in the photoresistive material and better process control overall. The antireflective indium arsenide layer is applied in a thickness of at least 500 angstroms and is further characterized by an 10 to 25% reflectivity relatively independent of coating thickness and wave length of light in the frequency range normally used to expose photoresist material.

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Sadagopan, "Anti-Interference and Antireflection Coatings . . . ," IBM Tech. Disclosure Bulletin, vol. 14(3) Aug. 1971, pp. 795-796.
Brewer et al., "Reduction of Standing-Wave Effect . . . ," J. Applied Photographic Eng., vol. 7(6) Dec. 1981, pp. 184-186.

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