Method for making InP heterostructure devices

Details Method for making InP heterostructure devices Method for making InP heterostructure devices

1999-02-23

2000-12-26

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438317, 438320, 438605, 438650, H01L 21331

Patent

active

061658596

ABSTRACT:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd--Pt--Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.

REFERENCES:
patent: 5106776 (1992-04-01), Lunardi et al.
patent: 5389554 (1995-02-01), Liu et al.
patent: 5648294 (1997-07-01), Bayraktaroglu
patent: 5840612 (1998-11-01), Oki et al.
patent: 5946582 (1999-08-01), Bhat

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