Method for making II-VI group compound semiconductor device

Details Method for making II-VI group compound semiconductor device Method for making II-VI group compound semiconductor device

1996-03-22

2000-03-07

Fahmy, Wael

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 37, 438102, 438571, 438572, 438573, 438575, 438603, 438660, 438663, H01L 2100

Patent

active

060339292

ABSTRACT:
A II-VI group compound semiconductor device includes a semiconductor substrate, a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer formed on the semiconductor substrate, and an electrode layer formed on the semiconductor layer, the electrode layer containing an additive element of Cd or Te and a metal which can form a eutectic alloy with the additive element, thus achieving an electrode layer having a small contact resistance, especially an electrode layer with an ohmic contact.

REFERENCES:
patent: 3780427 (1973-12-01), Jenkins et al.
patent: 5363395 (1994-11-01), Gaines et al.
Fan et al., "Graded band gap ohmic contact to p-ZnSe" Appl. Phys. Lett. (1992) 61(26):3160-3162.
Hiei et al., "Ohmic contacts to p-type ZnSe Using ZnTe/ZnSe multiquantum wells" Electronics Letters (1993) 29(10):878-879.
Lim et al., "Highly conductive p-type ZnSe formation using Li3N diffusion" Extended abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, Japan (1994) pp. 967-968.
Haase et al., "Short wavelength II-VI laser diodes" Inst. Phys. Conf. Ser. No. 120, Chapter 1, pp. 9-16.
Ohtsuka et al., "Growth and characterization of p-type CdSe" Extended Abstracts (54th) Japan Soc. of Appl. Phys. p. 255.
Cordes, H., et al., "Electrical properties and contact metallurgy of elemental (Cu, Ag, Au, Ni) and compound contacts on p-Cd.sub.0.95 Zn.sub.0.05 Te" Semiconductor Science and Technology (1995) 10(1):77-86.
Japanese publication 05-259509, published Oct. 8, 1993. (abstract only).
Zozime, A., et al., "Properties of sputtered mercury telluride contacts on p-type cadmium telluride" Revue Phys. Appl. (1988) 23: 1825-1835.

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