Method for making high resolution silicon shadow masks

Details Method for making high resolution silicon shadow masks Method for making high resolution silicon shadow masks

1989-05-26

1990-04-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156651, 156653, 156657, 1566591, 156662, 2041923, 20419237, 252 791, 313402, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

049197495

ABSTRACT:
A high resolution shadow mask with low pattern distortion is formed from a silicon membrane with a pattern of apertures etched through the membrane by reactive ion etching using a silicon dioxide masking layer. To achieve low distortion over a large area membrane, the stress of the membrane and the masking layer is controlled to remain within an optimal range so that the stress relief that occurs when the apertures are formed is kept negligibly small. A silicon membrane with controlled stress is made using a p
junction electrochemical etch-stop process. After making the membrane, it is then coated with a deposited silicon dioxide layer. The stress of the oxide layer may be adjusted to an optimum value by annealing after deposition. The membrane with the oxide mask layer is next coated with a photoresist layer which is then patterned with the desired shadow mask pattern. Once the photoresist is patterned, the pattern is then transferred into the oxide layer by reactive ion etching. The patterned oxide then serves as the mask for etching apertures through the silicon membrane, also done by reactive ion etching.

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Randall et al., "The Thermomechanical Stability of Ion Beam Masking", J. Vac. Sci. Technol., B5(1), Jan./Feb. 1987, pp. 223-227.
Shioya et al., "Comparison of Phosphosilicate Glass Films Deposited by Three Different Chemical Vapor Deposition Methods", J. Electrochemical Society, 133(9), Sep. 1986, pp. 1943-1950.
Yin et al., "Etch Silicon Dioxide with High Selectivity and Low Polymer Formation", Semiconductor International, Sep. 1988, pp. 110-114.
Fong et al., "High-Resolution Fabrication Process for Silicon Ion Masks", J. Vac. Sci. Technol., B6(6), Nov./Dec. 1988, 2112-2114.
Ameer et al., "Silicon Trench Etching Made Easy", Semiconductor International, Sep. 1988, pp. 122-128.

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