Method for making high density nonvolatile memory

Details Method for making high density nonvolatile memory Method for making high density nonvolatile memory

2006-03-07

2006-03-07

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S529000, C257S313000, C257S315000, C438S257000, C438S593000, C365S065000, C365S117000

Reexamination Certificate

active

07009275

ABSTRACT:
An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.

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patent: 6483736 (2002-11-01), Johnson et al.
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patent: 6693823 (2004-02-01), Brown
patent: 2004/0002186 (2004-01-01), Vyvoda et al.

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