Method for making heterojunction bipolar transistor with self-al

Details Method for making heterojunction bipolar transistor with self-al Method for making heterojunction bipolar transistor with self-al

1994-11-22

1997-08-12

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

257198, 257197, 438317, 438936, H01L 21265

Patent

active

056565143

ABSTRACT:
A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.

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