Method for making heterojunction bipolar mixer circuitry

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction

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438328, 438572, 257197, H01L 21331

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active

058375899

ABSTRACT:
Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of doped layer of the semiconductor body and the diode has a metal electrode is Schottky contact with another portion of such doped layer. The mixer is includes a diode and a DC biasing circuit, comprising a constant current, for biasing such diode to predetermined operating point substantially invariant with power of an input signal fed to such mixer.

REFERENCES:
patent: 5051372 (1991-09-01), Sasaki
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5401999 (1995-03-01), Bayraktaroglu

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