Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1996-12-27
1998-11-17
Niebling, John
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438328, 438572, 257197, H01L 21331
Patent
active
058375899
ABSTRACT:
Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of doped layer of the semiconductor body and the diode has a metal electrode is Schottky contact with another portion of such doped layer. The mixer is includes a diode and a DC biasing circuit, comprising a constant current, for biasing such diode to predetermined operating point substantially invariant with power of an input signal fed to such mixer.
REFERENCES:
patent: 5051372 (1991-09-01), Sasaki
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5401999 (1995-03-01), Bayraktaroglu
McNamara Brian J.
Tabatabaie-Alavi Kamal
Wendler John P.
Niebling John
Pham Long
Raytheon Company
LandOfFree
Method for making heterojunction bipolar mixer circuitry does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making heterojunction bipolar mixer circuitry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making heterojunction bipolar mixer circuitry will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-883942