Method for making GaN-based high electron mobility transistor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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C257S194000, C257SE29246

Reexamination Certificate

active

07851284

ABSTRACT:
A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.

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