Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-10-30
2010-12-14
Le, Thao X (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C257S194000, C257SE29246
Reexamination Certificate
active
07851284
ABSTRACT:
A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.
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Kaminsky, Jr. Edmund
Kretchmer James
Zhang An-Ping
Howard IP Law Group PC
Kraig William F
Le Thao X
Lockheed Martin Corporation
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