Method for making epitaxial silicon crystals with uniform doping

Details Method for making epitaxial silicon crystals with uniform doping Method for making epitaxial silicon crystals with uniform doping

1978-05-23

1980-05-06

Garris, Bradley R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156DIG64, 156DIG83, 148171, B01J 1720, B01J 1724, H01L 2162

Patent

active

042016231

ABSTRACT:
A crystal substrate of <111> silicon is doped by being exposed to a liquid etal solvent. The substrate is carried in a cavity in a refractory boat, and the solvent is carried in a perforation of a cover for the boat. The boat is heated to a certain temperature in a non-oxidizing atmosphere and is moved to place the substrate cavity under the cover perforation whereby the solvent and substrate come in contact. The temperature is raised and held to allow the desired substrate-solvent solution to form, then is reduced and held to allow supersaturation and eventually precipitation of the doped substrate. The boat is next moved to remove the cavity from beneath the perforation, is allowed to cool to room ambient, and is removed from the non-oxidizing atmosphere. The doped substrate is then cleaned as desired to remove any attached solvent.

REFERENCES:
patent: 3480535 (1969-11-01), Bloom
patent: 3565702 (1971-02-01), Nelson
patent: 4012233 (1977-03-01), Mayer et al.
patent: 4047986 (1977-09-01), Hanoka
patent: 4058418 (1977-11-01), Lindmayer
patent: 4128440 (1978-12-01), Baliga

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