Method for making electrical local interconnects

Details Method for making electrical local interconnects Method for making electrical local interconnects

1996-08-19

1997-04-29

Niebling, John

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438647, 438649, 438934, H01L 2128

Patent

active

056248717

ABSTRACT:
A method for producing an interconnect on a semiconductor device has silicon containing conductive surfaces and dielectric surfaces. The process includes forming separate regions of a blanket first refractory metal silicide on the silicon containing conductive surfaces, the first refractory metal silicide being composed of a first refractory metal and silicon from the surfaces, forming a blanket second refractory metal layer over the device, forming a blanket .alpha.-Si layer over the second refractory metal layer, forming a mask over the device to pattern an interconnect between the separate regions, then etching away the unwanted portions of the refractory metal layers and the .alpha.-Si layer, performing a rapid thermal annealing process on the device forming a low resistance refractory metal silicide between the .alpha.-Si layer and the second refractory metal layer, and then etching away the unwanted portions of the refractory metal layers that are not covered by the refractory metal silicide.

REFERENCES:
patent: 5589417 (1996-12-01), Jeng

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