Method for making die-compensated threshold tuning circuit

Details Method for making die-compensated threshold tuning circuit Method for making die-compensated threshold tuning circuit

1998-06-08

2000-04-11

Bowers, Charles

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438800, 438 18, 438 14, G01R 3126, H01L 2166

Patent

active

060487461

ABSTRACT:
To compensate for process, activity and environmental variations in a semiconductor device, a back-bias potential tuning circuit is formed on a semiconductor die. The tuning circuit tunes a bias potential applied to the semiconductor die to maintain a predetermined ratio between a transistor on-current and a transistor off-current through at least one channel region. Then, a leakage current is measured for multiple transistors formed in the semiconductor die to determine a representative leakage of the semiconductor die. Tuning characteristics of the back-bias potential tuning circuit are then set to match the representative leakage of the semiconductor die.

REFERENCES:
patent: 4142114 (1979-02-01), Green

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