Method for making devices having thin load structures

Details Method for making devices having thin load structures Method for making devices having thin load structures

1997-10-21

1999-03-16

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438467, 438131, H01L 2144

Patent

active

058829970

ABSTRACT:
A resistive load structure and method for making a resistive load structure for an integrated circuit includes the use of an amorphous silicon "antifuse" material. The resistive load structure can be used in an SRAM cell to provide a load to counteract charge leakage at the drains of two pull-down transistors and two pass transistors of the SRAM cell. The resistive load structure is advantageously formed by depositing an amorphous silicon pad over a conductive via, and the resistance of the resistive load structure is controlled by adjusting the thickness of the amorphous silicon pad and varying the diameter of the underlying conductive via.

REFERENCES:
patent: 4174521 (1979-11-01), Neale
patent: 4420766 (1983-12-01), Kasten
patent: 4441167 (1984-04-01), Principi
patent: 4538167 (1985-08-01), Yoshino et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5106773 (1992-04-01), Chen et al.
patent: 5191241 (1993-03-01), McCollum et al.
patent: 5233206 (1993-08-01), Lee et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5258891 (1993-11-01), Sako
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5298784 (1994-03-01), Gambino et al.
patent: 5308795 (1994-05-01), Hawley et al.
patent: 5311039 (1994-05-01), Kimura et al.
patent: 5373169 (1994-12-01), McCollum et al.
patent: 5404029 (1995-04-01), Husher et al.
patent: 5427979 (1995-06-01), Chang
patent: 5434432 (1995-07-01), Spratt et al.
patent: 5573971 (1996-11-01), Cleeves
patent: 5602053 (1997-02-01), Zheng et al.
patent: 5633189 (1997-05-01), Yen et al.
patent: 5639604 (1997-06-01), Kwok

Affiliated with

Also associated with

Rating

Method for making devices having thin load structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making devices having thin load structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making devices having thin load structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-817325