Method for making contacts in a high-density memory

Details Method for making contacts in a high-density memory Method for making contacts in a high-density memory

2005-11-01

2005-11-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S132000, C438S237000, C438S257000, C438S593000

Reexamination Certificate

active

06960495

ABSTRACT:
A method for forming a contact in a three dimensional monolithic memory is disclosed. In a preferred embodiment, the method comprises depositing a conductive layer over and in contact with a plurality of antifuses, wherein said antifuses are part of a story of active devices formed above a substrate; patterning and etching said conductive layer and insulating dielectric to form a contact void; and filling the contact void, wherein the conductive layer does not comprise silicon.

REFERENCES:
patent: 5904507 (1999-05-01), Thomas
patent: 5962910 (1999-10-01), Hawley et al.
patent: 6509209 (2003-01-01), Shroff et al.
patent: 6534403 (2003-03-01), Cleeves
patent: 2004/0002186 (2004-01-01), Vyvoda et al.

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