Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-09
1999-08-31
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 438614, H01L 2144
Patent
active
059465905
ABSTRACT:
A bump is formed on a semiconductor wafer which has a pad electrode thereon. The method includes the steps for coating a first organic film on a semiconductor water; drying the first organic film; applying an excimer laser to a portion of the first organic film substantially corresponding to the pad electrode to thereby form a first opening in the organic film; forming at least one metallic film on the first organic film and the opening; coating a second organic film on the metallic film; drying the second organic film; applying an excimer laser to a portion of the second organic film substantially corresponding to the first opening to thereby form a second opening in the second organic film; and providing and melting solder at the second opening to form a solder bump. Since the openings of the organic films are formed by the excimer laser, the openings can be formed in a short time with high accuracy. Thus, the bump with high quality can be formed at a low cost.
REFERENCES:
patent: 4950623 (1990-08-01), Dishon
patent: 5137845 (1992-08-01), Lochon et al.
patent: 5376584 (1994-12-01), Agarwala
Citizen Watch Co. Ltd.
Collins Deven
Picardat Kevin M.
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