Method for making avalanche semiconductor amplifier

Details Method for making avalanche semiconductor amplifier Method for making avalanche semiconductor amplifier

1976-04-29

1977-07-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29589, 156652, 156662, 357 15, H01L 21312

Patent

active

040338100

ABSTRACT:
A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system. The thermal resistance between the avalanching region and the heat sink is further reduced by the use of a Schottky type junction in which a thin layer of platinum is deposited on gallium arsenide N type semiconductor material and a gold heat sink is deposited on the platinum layer.

REFERENCES:
patent: 3689993 (1972-09-01), Talar
patent: 3698941 (1972-10-01), DeNobel et al.
patent: 3820236 (1974-06-01), Haitz

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