Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-01
2006-08-01
T., Thanh Nguyen (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S706000, C438S710000
Reexamination Certificate
active
07084054
ABSTRACT:
A method and apparatus for etchback profile control. The method includes performing a first etch through a first dielectric layer to form a first via and a second dielectric layer, filling the first via with a BARC material to form a first BARC layer, and performing a second etch on the first BARC layer to form a second BARC layer. The second etch has a first etch rate in a first peripheral region of the second BARC layer and a second etch rate in a first central region of the second BARC layer. The first peripheral region is located around a sidewall of the first via, and the first central region is located around a center of the first via. The first etch rate is larger than the second etch rate, and the first peripheral region is located higher than the first central region. A first top surface of the second BARC layer has substantially a first convex shape. Additionally, the method includes performing a third etch through a second dielectric layer to form a trench and a third BARC layer. The trench has a trench bottom surface, which is substantially free from any spike around a side surface of the third BARC layer. A second top surface of the third BARC layer has substantially a second convex shape. Moreover, the method includes removing the third BARC layer to form a second via.
REFERENCES:
patent: 6472231 (2002-10-01), Gabriel et al.
patent: 2004/0077175 (2004-04-01), Hsieh et al.
patent: 2004/0106297 (2004-06-01), Kanegae et al.
Kuang Eric
Song Wei Ji
Wu Han Ming
Nguyen T. Thanh
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend & Townsend and Crew LLP
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