Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-09-27
2009-12-01
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S052000, C438S053000, C438S487000, C257SE21003, C257SE21201
Reexamination Certificate
active
07625772
ABSTRACT:
Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence:formation of the substrate comprising one silicon area partly covered by two insulating areas,formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area,formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas,simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure,elimination of said sacrificial silicon and germanium alloy layer by selective etching.
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Ancey Pascal
Casset Fabrice
Durand Cedric
Commissariat a l''Energie Atomique
Nixon & Peabody LLP
Trinh Michael
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