Method for making an amorphous aluminum-nitrogen alloy layer

Details Method for making an amorphous aluminum-nitrogen alloy layer Method for making an amorphous aluminum-nitrogen alloy layer

1987-06-29

1990-09-25

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419216, C23C 1434

Patent

active

049591363

ABSTRACT:
Disclosed herein is a method for producing an amorphous aluminum nitride layer having a desired stoichiometry. Such method involves the steps of disposing a substrate in close proximity to an aluminum target in a low pressure atmosphere of nitrogen and an inert gas, and reactive sputtering an aluminum nitride layer onto the substrate at a certain minimum deposition rate while maintaining certain parameters (i.e. nitrogen-to-inert gas ratio, substrate temperature, sputtering power, nitrogen flow rate and sputtering pressure) within certain limits.

REFERENCES:
patent: 3461054 (1969-08-01), Vratny
patent: 3600218 (1971-08-01), Pennebaker
patent: 4082040 (1978-04-01), Yamashina et al.
patent: 4384933 (1983-05-01), Takasaki

Affiliated with

Also associated with

Rating

Method for making an amorphous aluminum-nitrogen alloy layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making an amorphous aluminum-nitrogen alloy layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making an amorphous aluminum-nitrogen alloy layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-327629