Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1995-02-01
1997-05-27
Dang, Thi
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 24, 216 41, 216 47, G02B 600
Patent
active
056329083
ABSTRACT:
An optical fiber support member is made by forming on a monocrystalline silicon substrate member (26) a first mask layer (27) of, e.g., silicon dioxide. The first mask layer is masked and etched to a first depth to define a pattern of first (29) and second (30) features, the first features defining the locations of optical fiber support grooves (15), and the second features defining the locations of support member reference surfaces (17, 19). Next, only the second features are etched to a second depth deeper than the first depth. Finally, the first and second features are simultaneously etched into the substrate such that the second features are etched to a greater depth than the first features. By defining the first and second features simultaneously in a single mask and etch step, one can assure the final precise alignment of etched V-grooves to etched reference surfaces. The second masking and etching step is used only to increase the depth of the second features defining the reference surfaces, not to determine their alignments. Consequently, if this second masking step is slightly misaligned, it will not necessarily result in a misalignment of the V-grooves with respect to the reference surfaces.
REFERENCES:
patent: 4818058 (1989-04-01), Bonanni
patent: 5131978 (1992-07-01), O'Neill
patent: 5316618 (1994-05-01), Van Lintel
Birnbaum Lester H.
Dang Thi
Lucent Technologies - Inc.
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