Etching a substrate: processes – Etching of semiconductor material to produce an article...
Patent
1998-03-31
2000-03-14
Nguyen, Nam
Etching a substrate: processes
Etching of semiconductor material to produce an article...
216 2, 216 24, 216 33, 216 39, 216 56, 438 54, 438456, 438700, 438703, C23F 100
Patent
active
060368721
ABSTRACT:
A method for fabricating a wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposition of the layer may be performed in a very low pressure environment, thus assuring the same kind of environment in the sealed chamber. The chamber may enclose at least one device such as a thermoelectric sensor, bolometer, emitter or other kind of device. The wafer-pair typically will have numerous chambers, with devices, respectively, and may be divided into a multiplicity of chips.
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patent: 5366587 (1994-11-01), Ueda et al.
patent: 5528452 (1996-06-01), Ko
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patent: 5851631 (1998-12-01), Borden et al.
Higashi Robert E.
Ridley Jeffrey A.
Wood R. Andrew
Honeywell Inc.
Mercado Julian A.
Nguyen Nam
Shudy Jr. John G.
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