Method for making a very pure silicon

Coating processes – Electrical product produced – Welding electrode

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427 91, 427 95, 427 86, 427252, 427 51, 118725, B05D 512

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043316980

ABSTRACT:
A process for producing high purity silicon semiconductor materials and mls by the thermal decomposition of a gaseous compound containing the silicon semiconductor material or metal passing over silicon carrier bodies heated by an external electrical power source. The silicon carrier bodies are arranged into groups coupled in parallel electrical connection across the power source during the start of the deposition process. An equal amount of electrical current is passed through each of the groups of the parallel connection to heat the carrier bodies to deposition temperature. The same current flows in each of the parallel carrier groups by using a current-divider inductor having a winding connected to each group.
The groups of carrier bodies are then switched from a parallel electrical connection to a series electrical connection, after the voltage across each heated carrier body reaches a predetermined reduced voltage, so that the current in each carrier body decreases and the current-divider inductor is switched out of the circuit.

REFERENCES:
patent: 2568411 (1951-09-01), Reed
patent: 3053638 (1962-09-01), Reiser
patent: 3232792 (1966-02-01), Rummel et al.
patent: 3242978 (1966-03-01), McGann
patent: 3941900 (1976-03-01), Stut et al.
patent: 4215154 (1980-07-01), Behensky et al.

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