Method for making a vertically redundant dual thin film transist

Details Method for making a vertically redundant dual thin film transist Method for making a vertically redundant dual thin film transist

1997-09-15

1999-06-01

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438193, 438283, 257241, H01L 2712, H01L 21265

Patent

active

059096152

ABSTRACT:
A thin film transistor having two vertically stacked channels and dual gate non-photosensitive structure, where the source drain to bottom gate structure is self-aligned. This structure occupies the same area on a substrate as a conventional single gate thin film transistor. This invention also discloses a process for manufacturing a dual gate structure with a simple three mask procedure.

REFERENCES:
patent: 5567959 (1996-10-01), Mineji
patent: 5793072 (1998-08-01), Kuo

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