Method for making a thin film bulk acoustic-wave resonator

Details Method for making a thin film bulk acoustic-wave resonator Method for making a thin film bulk acoustic-wave resonator

2005-06-14

2005-06-14

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S422000, C438S692000, C438S745000, C216S017000

Reexamination Certificate

active

06905970

ABSTRACT:
A method for making a thin film bulk acoustic-wave resonator (FBAR). First, define the cavity area on a substrate. Secondly, partially etch the patterned cavity area as a presacrificial layer. Thirdly, modify the nature of the presacrificial layer as a sacrificial layer, for example, using oxidization. Fourthly, polish the upper surface of the substrate and form the FBAR structure. Finally, remove the sacrificial layer to form the reflection cavity.

REFERENCES:
patent: 6060818 (2000-05-01), Ruby et al.
patent: 6182513 (2001-02-01), Stemme et al.
patent: 6384697 (2002-05-01), Ruby

Affiliated with

Also associated with

Rating

Method for making a thin film bulk acoustic-wave resonator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a thin film bulk acoustic-wave resonator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a thin film bulk acoustic-wave resonator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3486996