Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-30
2007-01-30
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S647000, C438S657000
Reexamination Certificate
active
10875057
ABSTRACT:
A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are associated with a separation smaller than or equal to 100 nm. Additionally, the system includes a plurality of address lines. Each of the plurality of address lines includes a gate region and an inactive region and intersects the plurality of semiconductor wires at a plurality of intersections. The plurality of intersections includes a first intersection and second intersection. The first intersection is associated with the gate region, and the second intersection is associated with the inactive region.
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Beckman Rob
Heath James R.
Luo Yi
California Institute of Technology
Duong Khanh
Smith Zandra V.
Townsend and Townsend / and Crew LLP
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