Method for making a stressed non-volatile memory device

Details Method for making a stressed non-volatile memory device Method for making a stressed non-volatile memory device

2011-06-14

2011-06-14

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S593000, C438S594000, C257SE21092, C257SE21209

Reexamination Certificate

active

07960267

ABSTRACT:
A method of making a semiconductor device on a semiconductor layer includes: forming a gate dielectric over the semiconductor layer; forming a layer of gate material over the gate dielectric; etching the layer of gate material to form a select gate; forming a storage layer that extends over the select gate and over a portion of the semiconductor layer; depositing an amorphous silicon layer over the storage layer; etching the amorphous silicon layer to form a control gate; and annealing the semiconductor device to crystallize the amorphous silicon layer.

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