Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth step with preceding and subsequent diverse...
Patent
1998-11-06
1999-10-12
Chaudhuri, Olik
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth step with preceding and subsequent diverse...
438503, 438507, 117 85, 117 90, H01L 2120
Patent
active
059666250
ABSTRACT:
A single crystal silicon wafer is sliced off so as to have a slant surface that is inclined from plane (001) such that the normal of the slant surface is inclined by 0.01.degree. to 0.2.degree. from direction [001] toward direction [110]. After being cleaned, the silicon wafer is heat-treated at 600-1,300.degree. C. for not less than 1 minute in an ultrapure argon or hydrogen atmosphere containing nitrogen at not more than 0.1 ppm, to thereby cause the slant surface to have a stepped crystal surface structure. The stepped crystal surface structure is constituted of step walls Sa and Sb when it has been formed by a heat treatment in an argon atmosphere, and substantially all of its step walls are of a type Sb when it has been formed by a heat treatment in a hydrogen atmosphere.
REFERENCES:
patent: 4564416 (1986-01-01), Homma et al.
patent: 4803173 (1989-02-01), Sill et al.
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 4987094 (1991-01-01), Colas et al.
patent: 5141893 (1992-08-01), Ito et al.
patent: 5212404 (1993-05-01), Awano
patent: 5230768 (1993-07-01), Furukawa et al.
patent: 5589421 (1996-12-01), Miyashita et al.
D.J. Chadi, "Stabilities of Single-Layer Bilayer Steps on Si(001) Surfaces", Physical Review Letters, vol. 59, No. 15, Oct. 12, 1987, pp. 1691-1694.
Nobuhiko Sato et al., "Hydrogen Annealed Silicon-on-Insulator", Applied Physics Letters, vol. 65, No. 15, Oct. 10, 1994, pp. 1924-1926.
English Language Derwent abstract of DE 3 617 927.
Akiko Natori, et al., "Step Structure Transformation of Si(001) Surface Induced by Current," Japanese Journal of Applied Physics, vol. 31, 1992, pp. 1164-1169.
B.S. Swartzentruber, "Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces," Journal of Vacuum Science & Technology A, vol. 7A, No. 4, Jul./Aug. 1989, pp. 2901-2905.
Kirino Yoshio
Shimoi Norihiro
Zhong Lei
Chaudhuri Olik
Toshiba Ceramics Co. Ltd.
Wille Douglas A.
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