Method for making a silicon dioxide layer on a silicon substrate

Details Method for making a silicon dioxide layer on a silicon substrate Method for making a silicon dioxide layer on a silicon substrate

1997-03-20

1998-04-07

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438591, 438594, 438770, 205157, 205333, H01L 21316

Patent

active

057364540

ABSTRACT:
The present invention relates to a method for forming a silicon dioxide layer on a silicon substrate, which is suitable for use as a thin-gate oxide. The method includes conducting an electrolytic reaction at a room temperature such that a silicon dioxide layer is formed on a silicon substrate acting as an anode, wherein pure water is used as an electrolyte of the electrolytic reaction. The silicon dioxide layer is further subjected with a rapid thermal densification carried out in an inert gas atmosphere and at a temperature of 700.degree.-1000.degree. C. for a period of time such that the silicon dioxide layer formed on said silicon substrate is densified.

REFERENCES:
patent: 3377258 (1968-04-01), Schmidt et al.
patent: 3764491 (1973-10-01), Schwartz
patent: 3890169 (1975-06-01), Schwartz
patent: 4289602 (1981-09-01), Sansregret
Thin-Gate Oxides Prepared by Pure Wter Anodization Followed by Rapid Thermal Densification, Jeng et al., IEEE Electronic Device Letters, vol. 17, No. 12, Dec. 1996, pp. 575-577.
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides preparede by anodic oxidation followed by rapid thermal nitridation in N.sub.2 O, Jeng et al., Appl. Phys. Lett. 69(25), 16 Dec. 1996, pp. 1-3.

Affiliated with

Also associated with

Rating

Method for making a silicon dioxide layer on a silicon substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a silicon dioxide layer on a silicon substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a silicon dioxide layer on a silicon substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12853