Semiconductor device manufacturing: process – Germanium or silicon or ge-si on iii-v
Reexamination Certificate
2007-01-16
2007-01-16
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Germanium or silicon or ge-si on iii-v
C438S752000, C438S753000, C257SE21008, C257S411000, C257S582000, C257S648000
Reexamination Certificate
active
10836172
ABSTRACT:
A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying the silicon layer. Alternatively, germanium is implanted into a top portion of the silicon layer to form an amorphous silicon germanium layer. The silicon germanium layer is then oxidized to convert the silicon germanium layer into a silicon dioxide layer and to convert at least a portion of the silicon layer into germanium-rich silicon. The silicon dioxide layer is then removed prior to forming transistors using the germanium-rich silicon. In one embodiment, the germanium-rich silicon is selectively formed using a patterned masking layer over the silicon layer and under the silicon germanium layer. Alternatively, isolation regions may be used to define local regions of the substrate in which the germanium-rich silicon is formed.
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Barr Alexander L.
Orlowski Marius K.
Sadaka Mariam G.
White Ted R.
Chiu Joanna G.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Nhu David
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