Method for making a semiconductor laser

Fishing – trapping – and vermin destroying

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437107, 437126, 437133, 437129, 372 43, 372 44, 372 45, 372 46, H01L 2120

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053148380

ABSTRACT:
Disclosed is a method for manufacturing a vertical cavity, surface-emitting laser. The method includes growing a distributed Bragg reflector having at least 10 layers of alternating composition on a gallium arsenide substrate. The growth surface of the substrate is tilted by an angle of 1.degree.-7.degree. from the orientation of a (100) surface toward the orientation of a (111)A surface. This results in improved reflectivity of the DBR.

REFERENCES:
patent: 4660207 (1987-04-01), Svilans
patent: 4873696 (1989-10-01), Coldren et al.
patent: 4994408 (1991-02-01), Johnson
patent: 5027169 (1991-06-01), Takahashi et al.
patent: 5034344 (1991-07-01), Jewell et al.
patent: 5034958 (1991-07-01), Kwon et al.
Wang, Y. H. et al., "Observation of reduced current thresholds in GaAs/AlGaAs vertical-cavity surface-emitting lasers grown on 4.degree. off-orientation (001) GaAs substrates", Appl. Phys. Lett. 57 (16), 1990, pp. 1613-1615.
Ogura, M. et al., "Surface-Emitting Laser Diode With Distributed Bragg Reflector and Buried Heterostructure", Electronics Letters, 26 (1), 1990, pp. 18-19.
Mochizuki, K. et al., "Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE", Japanese Journal of Applied Physics, Part 2 (Letters) 29 (7), 1990, pp. L1046-L1048.
Heiblum, M. et al., "Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs," J. Appl. Phys. 54, (12) Dec. 1983, pp. 6982-6988.
J. Appl. Phys. 66, 1989, "Characterization of GaAs/(GaAs).sub.n (AlAs).sub.m Surface-Emitting Laser Structures Through Reflectivity and High-Resolution Electron Microscopy Measurements," by J. Faist, et al., pp. 1023-1032.
Appl. Phys. Lett. 55, 1989, "Room-Temperature Continuous-Wave Vertical-Cavity surface-Emitting GaAs Injection Lasers," by K. Tai, et al., pp. 2473-2475.
J. Appl. Phys. 58, 1985, "Effects of Substrate Misorientation on the Properties of (Al,Ga)As Grown by Molecular Beam Epitaxy," by Tsui, et al., pp. 2570-2572.
Thin Solid Films 100, 1983, "Growth of III-V Semiconductors by Molecular Beam Epitaxy and Their Properties," by A. Y. Cho, pp. 291-317.
J. Crystal Growth 95, 1989, "Influence of As.sub.4 /Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy," by Y. C. Pao and J. Franklin, pp. 301-304.
J. Appl. Phys. 59, 1986, "Properties of Al.sub.x Ga.sub.1-x As(x.sub.Al approximately 0.3) Grown by Molecular-Beam Epitaxy on Misoriented Substrates," by Tsui, et al., pp. 1508-1512.
Appl. Phys. Lett. 51, 1987, "Effect of Substrate Tilting on Molecular Beam Epitaxial Grown AlGaAs/GaAs Lasers Having Very Low Threshold Current Densities," by H. X. Chen, et al., pp. 2094-2096.

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