Semiconductor component

Details Semiconductor component Semiconductor component

1991-06-11

1992-09-29

James, Andrew J.

357 13, 357 234, 357 34, H01L 2974

Patent

active

051517663

ABSTRACT:
In order to improve overall the trade-off between forward voltage drop and turn-off time, in a doped zone an axially limited region is provided with recombination centers. The recombination centers form a trap density profile varying periodically in one or two dimensions transverse to the axial direction. The period corresponds approximately to the bulk diffusion length of the minority charge carriers in the doped zone. Preferably, the change in the trap density profile from segments of low trap density to segments of high trap density takes place abruptly. The sections of low trap density and those of high trap density are approximately of the same size in terms of area.

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patent: 4278475 (1981-07-01), Bartko et al.
patent: 4406709 (1983-09-01), Celler
patent: 4987087 (1991-01-01), Voss

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