Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-08-02
2005-08-02
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S511000, C257S513000, C257S200000, C438S751000
Reexamination Certificate
active
06924543
ABSTRACT:
A method and apparatus for a semiconductor device having increased electrical carrier mobility is described. That method and apparatus comprises forming two recesses within a substrate, and providing a material within the two recesses. The material has a predetermined coefficient of thermal expansion (CTE) to facilitate introduction of a predetermined strain within the substrate in a location between the two recesses. Also described is a semiconductor device that comprises a substrate having two recesses formed therein, and a material disposed within the two recesses. The material has a predetermined coefficient of thermal expansion (CTE) to facilitate introduction of a predetermined strain within the substrate in a location between the two recesses.
REFERENCES:
patent: 6177359 (2001-01-01), Chen et al.
patent: 2004/0113174 (2004-06-01), Chidambarrao et al.
Tolchinsky Peter G.
Yablok Irwin
Plimier Michael D.
Wojciechowicz Edward
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