Method for making a semiconductor device having copper...

Details Method for making a semiconductor device having copper... Method for making a semiconductor device having copper...

2000-12-19

2002-09-24

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S625000, C438S631000, C438S634000, C438S656000, C438S660000

Reexamination Certificate

active

06455426

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to semiconductor devices that include copper conductive layers.
BACKGROUND OF THE INVENTION
Semiconductor devices include metal layers that are insulated from each other by dielectric layers. When copper is used to make those metal layers, it may be desirable to form an etch stop layer or layers, e.g., a layer comprising silicon nitride or silicon carbide, on such copper containing layers. Unfortunately, current processes for applying such an etch stop layer to copper containing layers may yield a device with marginal adhesion between those layers, which may degrade electromigration performance.
Accordingly, there is a need for an improved method for making a semiconductor device that includes copper conductive layers. There is a need for such a process that improves adhesion between copper conductive layers and an etch stop layer that is formed on them. The present invention provides such a process.


REFERENCES:
patent: 6004850 (1999-12-01), Lucas et al.
patent: 6140237 (2000-10-01), Chan et al.
patent: 6184128 (2001-02-01), Wang et al.

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