Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2007-01-02
2007-01-02
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C257SE21444, C257SE21453, C257SE21624, C257SE21625, C257SE21638, C257SE21639, C257SE21655, C438S183000, C438S216000, C438S287000, C438S591000, C438S654000, C438S656000, C438S508000
Reexamination Certificate
active
10885958
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, forming a trench within the dielectric layer, and forming a high-k gate dielectric layer within the trench. After forming a first metal layer on the high-k gate dielectric layer, a second metal layer is formed on the first metal layer. At least part of the second metal layer is removed from above the dielectric layer using a polishing step, and additional material is removed from above the dielectric layer using an etch step.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Engineer Rahul D.
Fourson George R.
Maldonado Julio J.
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