Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1993-01-29
1999-06-01
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438483, 438572, H01L 2120
Patent
active
059083069
ABSTRACT:
A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a channel region connected multiply with multiplicity of n (n.gtoreq.3) and having (n-1)-fold rotational symmetry around an axis of the channel region; a gate electrode surrounding a side wall of the channel region; and source and drain electrodes electrically connected to one and another end of the channel region along the axis. Electrons move in an effective channel region along or around the axis from the source toward the drain. Electron interference in the effective channel region is controlled by a magnetic field applied in the axis direction and/or the gate electrode.
REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 4729000 (1988-03-01), Abrokwah
patent: 4796068 (1989-01-01), Katayama et al.
patent: 4916499 (1990-04-01), Kawai
patent: 5157467 (1992-10-01), Fujii
patent: 5234848 (1993-08-01), Seabaugh
patent: 5412223 (1995-05-01), Ishibashi et al.
patent: 5428224 (1995-06-01), Hayashi et al.
patent: 5447873 (1995-09-01), Randall et al.
patent: 5705827 (1998-01-01), Baba et al.
patent: 5811831 (1998-09-01), Isihbashi et al.
Onda et al, "Stripep Channel Field Effect Transistors With a Modulation Doped Structure", IEDM, 1989 pp. 125-128. (IEEE International Electron Device Meeting).
Ishibashi Akira
Ravenhall David G.
Schult Roy L.
Wyld Henry W.
Mulpuri S.
Niebling John F.
Sony Corporation
The Board of Trustees of the University of Illinois
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