Method for making a semiconductor device

Details Method for making a semiconductor device Method for making a semiconductor device

1978-09-25

1980-08-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 148187, 156657, 1566591, 156662, 156904, 357 23, 357 41, 357 59, 427 86, 427 93, H01L 21306

Patent

active

042193796

ABSTRACT:
A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.

REFERENCES:
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patent: 3576478 (1971-04-01), Watkins et al.
patent: 3745647 (1973-07-01), Boleky
patent: 3865654 (1975-02-01), Chang et al.
patent: 3869786 (1975-03-01), Adam et al.
patent: 3911168 (1975-10-01), Schinella et al.
patent: 3913211 (1975-10-01), Seeds et al.
patent: 3921283 (1975-11-01), Shappir
patent: 4062707 (1977-12-01), Mochizuki et al.
IBM Technical Disclosure Bulletin, vol. 15, No. 6, Nov. 1972, Fabricating Submicrometer Silicon Devices, by E. Bassous, pp. 1823-1825.
IBM Technical Disclosure Bulletin, vol. 15, No. 10, Mar. 1973, FET Integrated Circuit Having Two Polysilicon Layers, by S. A. Abbas, pp. 3022-3023.
IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, Surface Protected Etching Technique for Silicon Gate FETs, by Jones et al., pp. 1052-1053.

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